BLV25

DISCRETE SEMICONDUCTORS DATA SHEET BLV25 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily for use in v.h.f.-f.m. broadcast transmitters. FEATURES internally matched input for wideband operation and high power gain; multi-base structure and diffused emitter ballasting resistors for an optimum temperature profile; gold-metallization ensures excellent reliability. The transistor has a 1⁄2in 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit. MODE OPERATION narrow band; c.w. PIN CONFIGURATION VCE V 28 f MHz 108 PL W 175 PS W < 17,5 Gp dB > 10,0 PINNING PIN 1 handbook, halfpage BLV25 η % > 65 DESCRIPTION emitter emitter base collector emitter emitter 1 2 2 3 4 5 6 3 4 5 6 MSB006 Fig.1 Simplified outline, SOT119A. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. August 1986 2 Philips Semiconductors Product specification VHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (peak value); VBE = 0 open base Emitter-base voltage (open collector) Collector current d.c. or average (peak value); f > 1 MHz Total power...