BLV32F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLV32F is Designed for in linear v.h.f. amplifiers of telev...
BLV32F
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI BLV32F is Designed for in linear v.h.f. amplifiers of television transmitters and transporters.
FEATURES:
Diffused emitter ballasting resistors PG = 16 dB at 10 W/224 MHz Omnigold™ Metalization System
PACKAGE STYLE .500 6L FLG
MAXIMUM RATINGS
IC VCBO VCEO VCES VEBO PDISS TJ TSTG θJC
O O
4.0 A 60 V 32 V 60 V 4.0 V 82 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 2.1 C/W
O O O O
1= Collector 2= Base 3 and 4= Emitter
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVEBO ICES hFE CC PG IC = 15 mA IE = 10 mA VCE = 32 V VCE = 25 V VCB = 25 V VCE = 25 V
TC = 25 C
O
NONETEST CONDITIONS
IC = 100 mA
MINIMUM TYPICAL MAXIMUM
32 60 4.0 5.0
UNITS
V V V mA --pF dB
IC = 1.6 A f = 1.0 MHz POUT = 10 W f = 224 MHz
20 50 16
120
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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