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DISCRETE SEMICONDUCTORS
DATA SHEET
BLV33 VHF linear power transistor
Product specification Supersedes data of November 1995 1996 Oct 10
Philips Semiconductors
Product specification
VHF linear power transistor
FEATURES • Diffused emitter ballasting resistors for an optimum temperature profile • Gold sandwich metallization ensures excellent reliability. APPLICATIONS • Primarily intended for use in linear VHF amplifiers for television transmitters and transposers.
handbook, halfpage
BLV33
PINNING - SOT147 PIN 1 2 3 4 SYMBOL c e b e emitter base emitter DESCRIPTION collector
2 c 1 b
DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 1⁄ " 4 fslead SOT147 capstan package with ceramic cap. 16 All leads are isolated from the stud.
3 e 4
Top view
MAM270
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA RF performance in a common emitter push-pull test circuit. MODE OF OPERATION CW, class-A CW, class-AB Notes 1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to peak sync level. 2. Television service (negative modulation, C.C.I.R. system). WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. fvision (MHz) 224.25 224.25 VCE (V) 25 28 IC, IC(ZS) (A) 3.2 0.1 Th (°C) 70 25 70 dim(1) (dB) −55 −55 Po sync(1) (W) >16.5 typ. 26 typ. 90 GP (dB) >9 typ. 9.7 typ. 6.5 30/25 sync compr.(2) sync in/sync out (%)
1996 Oct 10
2
Philips Semiconductors
Product specification
VHF linear power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM VCEO VEBO IC IC(AV) ICM Ptot Prf Tstg Tj PARAMETER collector-emitter voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current peak collector current total power dissipation (DC) RF power dissipation storage temperature operating junction temperature f > 1 MHz Tmb = 25 °C f > 1 MHz; Tmb = 25 °C VBE = 0 open base open collector CONDITIONS − − − − − − − − −65 − MIN. MAX. 65 33 4 12.5 12.5 20 132 165 +150 200
BLV33
UNIT V V V A A A W W °C °C
THERMAL CHARACTERISTICS SYMBOL Rth j-mb(dc) Rth j-mb(rf) Rth mb-h PARAMETER thermal resistance from junction to mounting base (DC dissipation) thermal resistance from junction to mounting base (RF dissipation) thermal resistance from mounting base to heatsink CONDITIONS Pdiss = 80 W; Tmb = 82 °C; Th = 70 °C Pdiss = 80 W; Tmb = 82 °C; Th = 70 °C Pdiss = 80 W; Tmb = 82 °C; Th = 70 °C VALUE 1.46 1.17 0.15 UNIT K/W K/W K/W
102 handbook, halfpage IC (A)
MGG120
handbook, halfpage
200
M.