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BLV33F

Advanced Semiconductor

NPN SILICON RF POWER TRANSISTOR

BLV33F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV33F is Designed for Operation in Band III TV Transposer...


Advanced Semiconductor

BLV33F

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Description
BLV33F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV33F is Designed for Operation in Band III TV Transposers and Transmitter Amplifiers from 170 to 230 MHz. FEATURES: Gold Metalization Internal Input Matching Omnigold™ Metalization System PACKAGE STYLE .500 6L FLG MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG θJC O O 10 A 60 V 35 V 140 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 1.5 C/W O O O O 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER ORDER CODE: ASI10493 O CHARACTERISTICS SYMBOL BVCEO BVCER BVEBO ICES hFE Cob GPE IMD3 IC = 50 mA IC = 50 mA IE = 10 mA VE = 28 V VCE = 5.0 V VCB = 28 V TC = 25 C NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 35 60 4.0 5 UNITS V V V mA --pF dB IC = 1.0 A f = 1.0 MHz ICQ = 3.2 A Vision = -8 dB Side Band = -16 dB f = 225 MHz Snd. = -7 dB 10 100 80 VCE = 25 V PREF = 16 W 13.5 14.5 -55 dBc A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...




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