MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™Designer's Data Sheet Insulated Gate Bipolar
Transistor with Anti-Parallel Diode
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar
Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Its new 600 V IGBT technology is
specifically suited for applications requiring both a high tempera-
ture short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high
frequencies. Co–packaged IGBTs save space, reduce assembly
time and cost. This new E–series introduces an energy efficient,
ESD protected, and rugged short circuit device.
Industry Standard TO–220 Package High Speed: Eoff = 60 mJ per Amp typical at 125°C High Voltage Short Circuit Capability – 10 ms minimum at
125°C, 400 V Low On–Voltage — ...