MGP15N38CL

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate Collector Over– Voltage Protection from monolithic circuitry for usage as an Ignition Coil Driver. Temperature Compensated Gate – Collector Clamp Limits Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Order this document by MGP15N38CL/D MGP15N38CL 15 AMPERES N–CHANNEL IGBT VCE(on) = 1.8 V 380 VOLTS CLAMPED C G GC E CASE 221A–09 STYLE 9 TO–220AB E MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Collector–Emitter Voltage Collector–Gate Voltage Gate–Emitter Voltage Collector Current — Continuous Total Power Dissipation Derate above 25°C VCES VCER VGE IC PD CLAMPED CLAMPED CLAMPED 15 136 0.9...