MGP7N60ED

MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. Co–packaged IGBTs save space, reduce assembly time and cost. This new E–series introduces an energy efficient, ESD protected, and short circuit rugged device. Industry Standard TO–220 Package High Speed: Eoff = 70 mJ/A typical at 125°C High Voltage Short Circuit Capability – 10 ms minimum at 125°C, 400 V Low On–Voltage 2.0 V typ...