power transistor. BLV859 Datasheet
UHF linear push-pull power
Supersedes data of 1995 Oct 04
1996 Jul 26
UHF linear push-pull power transistor
• Double internal input and output matching for an
optimum wideband capability and high gain
• Polysilicon emitter ballasting resistors for an optimum
• Gold metallization ensures excellent reliability.
• Common emitter class-A operation in linear
transposers/transmitters (television) in the
470 to 860 MHz frequency band.
NPN silicon planar transistor with two sections in push-pull
configuration. The device is encapsulated in a SOT262B
4-lead rectangular flange package, with two ceramic caps.
It delivers a Po sync = 20 W in class-A operation at
860 MHz and a supply voltage of 25 V.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common emitter push-pull test circuit.
MODE OF OPERATION
860 25 2 × 2.25
1. Three-tone test signal (−8, −16 and −10 dB); dim = −54 dB.
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1996 Jul 26