BLV861

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D099 BLV861 UHF linear push-pull power transistor Product specification Supersedes data of 1998 Jan 14 1998 Jan 16 Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES Double stage internal input and output matching networks for an optimum wideband capability and high gain Polysilicon emitter ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability. APPLICATIONS Common emitter class-AB output stages of television transmitter amplifiers (sound and vision) operating in bands 4 and 5 (470 to 860 MHz). DESCRIPTION NPN silicon planar epitaxial transistor with two sections in push-pull configuration. The device is encapsulated in a SOT289A 4-lead rectangular flange package, with a ceramic cap. PINNING PIN 1 2 3 4 5 Notes SYMBOL c1 c2 b1 b2 e BLV861 DESCRIPTION collector 1; note 1 collector 2; note 1 base 1 base 2 common emitters; note 2 1. Collectors c1 and c2 are internally connected. 2. Common emitters are connected to the flange. handbook, halfpage c1 1 2 b1 e 5 3 Top view b2 4 MAM374 c2 Fig.1 Simplified outline (SOT289A) and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter push-pull test circuit. MODE OF OPERATION CW class-AB f (MHz) 860 VCE (V) 28 PL (W) 100 Gp (dB) ≥8.5 ηC (%) ≥55 ∆Gp (dB) ≤1 WARNING Product and environmental safety - toxic materials This product contains beryllium oxi...