FA2659-AL

Document 561 SMT Gate Drive Transformer Designed for transformer coupled MOSFET and IGBT gate drive circuits; operating frequency: 50 kHz to 2 MHz. 2250 Vdc, one minute primary to secondary isolation Requires only 56 mm2 of board space. Specified by National Semiconductor on AN-1521 for their POE+PHYTEREV-I/-E evaluation boards. SpecifiedontheMicrosemiPD70211EVB51F-12evaluationboard Core material Ferrite Terminations  RoHS compliant tin-silver over tin over nickel over phos bronze Weight  700 mg Ambient temperature  –40°C to +125°C Storage temperature  Component: –40°C to +125°C. Tape and reel packaging: –40°C to +80°C Resistance to soldering heat  Max three 40 second reflows at +260°C, parts cooled to room temperature between cycles Moisture Sensitivity Level (MSL)  1 (unlimited floor life at <30°C / 85% relative humidity) Failures in Time (FIT) / Mean Time Between Failures (MTBF) 38 per billion hours / 26,315,789 hours, calculate...