BLV862

DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLV862 UHF linear push-pull power transistor Product specification Supersedes data of 1997 Oct 14 1999 Jun 25 Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES Double stage internal input and output matching networks for an optimum wideband capability and high gain Polysilicon emitter ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability. APPLICATIONS Common emitter class-AB operation in output stages in bands 4 and 5 (470 to 860 MHz) television transmitter amplifiers (vision or sound). DESCRIPTION NPN silicon planar epitaxial transistor with two sections in push-pull configuration. The device is encapsulated in a SOT262B 4-lead rectangular flange package, with two ceramic caps. 5 3 Top view MAM031 BLV862 PINNING PIN 1 2 3 4 5 Notes 1. Collectors 1 and 2 are connected together internally. 2. Common emitters are connected to the flange. SYMBOL c1 c2 b1 b2 e DESCRIPTION collector 1; note 1 collector 2; note 1 base 1 base 2 common emitter; note 2 handbook, halfpage c1 1 2 b1 e 5 4 b2 c2 Fig.1 Simplified outline (SOT262B) and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter push-pull test circuit. MODE OF OPERATION CW class-AB f (MHz) 860 VCE (V) 28 PL (W) 150 Gp (dB) ≥8 typ. 9 ηC (%) ≥45 typ. 52 ∆Gp (dB) ≤1 WARNING Product and environmental safety - toxic materials This product contains berylli...