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DISCRETE SEMICONDUCTORS
DATA SHEET
BLV897 UHF push-pull power transistor
Preliminary specification Supersedes data of 1997 Oct 03 1997 Nov 10
Philips Semiconductors
Preliminary specification
UHF push-pull power transistor
FEATURES • Internal input matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. APPLICATIONS • Common emitter class-AB operation in base stations in the 800 to 960 MHz frequency band.
handbook, halfpage
BLV897
PINNING - SOT324B PIN 1 2 3 4 5 SYMBOL c1 c2 b1 b2 e DESCRIPTION collector 1 collector 2 base 1 base 2 common emitters connected to flange
c1 2 b1 e 5 b2
DESCRIPTION NPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT324B 4-lead rectangular flange package with a ceramic cap. The common emitters are connected to the flange.
1
3 Top view
4 c2
MAM217
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter push-pull test circuit. MODE OF OPERATION CW, class-AB 2-tone, class-AB f (MHz) 900 900 VCE (V) 24 24 ICQ (mA) 2 × 80 2 × 80 PL (W) 30 30 (PEP) Gp (dB) ≥10 ≥11 ηC (%) ≥45 ≥35 d3 (dBc) − <−32; typ. −37
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
1997 Nov 10
2
Philips Semiconductors
Preliminary specification
UHF push-pull power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj Note 1. Total device; both sections equally loaded. THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Note 1. Total device; both sections equally loaded. CHARACTERISTICS Values apply to either transistor section; Tj = 25 °C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE Cc PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-base leakage current DC current gain collector capacitance CONDITIONS IC = 15 mA; IE = 0 IC = 30 mA; IB = 0 IE = 0.6 mA; IC = 0 VCB = 28 V; VBE = 0 VCE = 10 V; IC = 1 A MIN. 70 30 3 − 30 TYP. − − − − − 18 PARAMETER CONDITIONS VALUE 1.79 0.4 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature operating junction temperature Tmb = 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − −65 − MIN.
BLV897
MAX. 70 30 3 5 5 97 +150 200 V V V A A W
UNIT
°C °C
UNIT K/W K/W
thermal resistance from junction to mounting base Ptot = 97 W; note 1 thermal resistance from mounting base to heatsink note 1
MAX. − − − 1.5 120 −
UNIT V V V mA pF
VCB = 24 V; IE = ie = 0; f = 1 MHz −
1997 Nov 10
3
Philips Semiconductors
Preliminary specification
UHF push-pull power transistor
APPLICATION INFORMATION RF performance at Th = 25 °C in a common emitter push-pull class-AB test circuit. MODE OF OPERATION CW, class-AB 2-tone, class-AB f (MHz) 900 900 VCE (V) 24 24 ICQ (mA) 2 × 80 2 × 80 PL (W) 30 30 (PEP) Gp (dB) ≥10 ≥11 ηC (%) ≥45 ≥35
BLV897
d3 (dBc) − <−32; typ. −37
Ruggedness in class-AB operation The BLV897 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the conditions: VCE = 24 V; ICQ = 2 × 80 mA; f = 900 MHz; Th = 25 °C; PL = 30 W. The transistor is also capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases at PL = 30 W (PEP).
handbook, halfpage
50
MBK287
PL (W) 40
handbook, G halfpage
14 p (dB) 12
MBK286
70 ηC (%) 60 50
Gp
10 30 ηC 8 6 4 10 2 0 0 1 2 3 4 5 6 PD (W) 0 0 10 20 30 40 PL (W)
40 30 20 10 0 50
20
VCE = 24 V; ICQ = 2 × 80 mA; f = 900 MHz.
VCE = 24 V; ICQ = 2 × 80 mA; f = 900 MHz.
Fig.2
Load power as a function of drive power; typical values.
Fig.3
Power gain and collector efficiency as functions of load power; typical values.
1997 Nov 10
4
Philips Semiconductors
Preliminary specification
UHF push-pull power transistor
BLV897
handbook, full pagewidth
L12 VBB R3
C8
L16 R6
C24 +VCC C22
C6
R1
C10
C12
C14
C16 C18
C20
input 50 Ω
,,,, ,,,, ,,,, ,, ,,,, ,, ,,,, ,,,, ,,,, ,,,, ,,,,
L14 L10 L8 L6 L1 C1 L4 L2 C4 C3 C2 L3 L5 L7 L9 L11 L15 C5 R2 C9 C11 C13 C15 L13 C7
L20
DUT
L21
,,,, ,,,, ,,,, ,,,,,, ,,,, ,, ,,,, ,,,, ,,,,
L18 L22 L24 L26 C28 L28 L29 C25 C27 C26 C29 L25 L27 L30 L23 L19 C19 R5 C21 +VCC L17 C23
MGM146
output 50 Ω
C17
VBB
R4
Fig.4 Class-AB test circuit at 900 MHz.
19.