BLV909

DISCRETE SEMICONDUCTORS DATA SHEET M3D175 BLV909 UHF power transistor Product specification Supersedes data of 1996 Nov 04 1999 Jun 25 Philips Semiconductors Product specification UHF power transistor FEATURES Emitter ballasting resistors for optimum temperature profile Gold metallization ensures excellent reliability Internal input matching to achieve high power gain and easy design of wideband circuits. APPLICATIONS Common emitter class-AB operation in base stations in the 820 to 960 MHz frequency range. DESCRIPTION NPN silicon planar epitaxial transistor in an 8-lead SOT409B SMD package with a ceramic cap. All leads are isolated from the mounting base. 1 Top view 4 MSA467 BLV909 PINNING - SOT409B PIN 1, 4, 5, 8 2, 3 6, 7 SYMBOL e b c base collector DESCRIPTION emitter 8 handbook, halfpage 5 c b e Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a common emitter test circuit. MODE OF OPERATION CW, class-AB 2-tone, class-AB f (MHz) 960 f1 = 960; f2 = 960.1 VCE (V) 26 26 PL (W) 9 9 (PEP) Gp (dB) ≥9.5 ≥9.5 ηC (%) ≥50 ≥35 dim (dBc) − typ. −30 1999 Jun 25 2 Philips Semiconductors Product specification UHF power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature ...