BLV958FL

DISCRETE SEMICONDUCTORS DATA SHEET BLV958; BLV958FL UHF power transistors Product specification Supersedes data of 1997 Oct 15 2000 Jan 12 Philips Semiconductors Product specification UHF power transistors FEATURES Internal input and output matching for easy matching, high gain and efficiency Poly-silicon emitter ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability. APPLICATIONS Base stations in the 800 to 960 MHz frequency range. PINNING - SOT391A PIN 1 2 3 SYMBOL c b e base emitter; connected to flange DESCRIPTION collector PINNING - SOT391B PIN 1 2 Ground plane DESCRIPTION BLV958; BLV958FL NPN silicon planar epitaxial transistors primarily intended for common emitter class-AB operation. The transistors have internal input and output matching by means of MOS capacitors. The encapsulations are a 2-lead rectangular SOT391A flange package and a SOT391B flangeless package, both with a ceramic cap. SYMBOL c b e base DESCRIPTION collector emitter handbook, halfpage 1 c b 3 handbook, halfpage 1 c b 2 Top view MAM203 e 2 Top view MSA465 e Fig.1 Simplified outline (SOT391A) and symbol. Fig.2 Simplified outline (SOT391B) and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit. MODE OF OPERATION CW, class-AB f (MHz) 900 960 VCE (V) 26 26 PL (W) 75 75 Gp (dB) ≥8 ≥8.5 ηC (%) ≥50 ≥50 WARNING Product and environmental safety - toxic materials This product contains berylli...