BLV99

DISCRETE SEMICONDUCTORS DATA SHEET BLV99/SL UHF power transistor Product specification September 1991 Philips Semiconductors Product specification UHF power transistor FEATURES Emitter-ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT172D envelope with a ceramic cap. It is designed primarily for use as a driver stage in base stations in the 900 MHz communications band. All leads are isolated from the mounting base. PINNING - SOT172D PIN 1 2 3 4 base collector emitter DESCRIPTION emitter WARNING Product and environmental safety - toxic materials 2 3 handbook, halfpage halfpage BLV99/SL PIN CONFIGURATION 1 c b MBB012 e 4 Top view MSB007 Fig.1 Simplified outline and symbol. This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a common emitter class-B test circuit. MODE OF OPERATION c.w. narrow band f (MHz) 900 24 VCE (V) 2 PL (W) Gp (dB) >8 ηc (%) > 55 September 1991 2 Philips Semiconductors Product specification ...