DISCRETE SEMICONDUCTORS
DATA SHEET
BLW60C VHF power transistor
Product specification March 1993
Philips Semiconductors...
DISCRETE SEMICONDUCTORS
DATA SHEET
BLW60C VHF power
transistor
Product specification March 1993
Philips Semiconductors
Product specification
VHF power
transistor
DESCRIPTION N-P-N silicon planar epitaxial
transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 12,5 V. The
transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V. Matched hFE groups are available on request. It has a 3/8" capstan envelope with a ceramic cap. All leads are isolated from the stud.
BLW60C
QUICK REFERENCE DATA R.F. performance up to Th = 25 °C MODE OF OPERATION c.w. (class-B) s.s.b. (class-AB) VCC V 12,5 f MHz 175 PL W 45 GL dB > 5,0 η % > 75 typ. 35 zi Ω 1,2 + j1,4 − ZL Ω 2,6 − j1,2 − d3 dB − typ. −33
12,5 1,6-28
3-30 (P.E.P.) typ. 19,5
PIN CONFIGURATION
PINNING - SOT120A. PIN DESCRIPTION collector emitter base emitter
handbook, halfpage
4
1 2 3
1
3
4
2
MSB056
Fig.1 Simplified outline. SOT120A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
March 1993
2
Philips Semiconductors
Product specification
VHF power
transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collec...