LS4448

LS4448 Silicon Epitaxial Planar Switching Diode Fast switching diode in QuadroMELF case especially suited for automatic surface mounting. Identical electrically to standard JEDEC 1N4448. LS-34 QuadroMELF Dimensions in mm Absolute Maximum Ratings (Ta = 25℃) Parameter Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current HSurge Forward Current at t < 1 s Power Dissipation CJunction Temperature Storage Temperature Range E1) Valid provided that electrodes are kept at ambient temperature. Symbol VRM VR IF(AV) IFSM Ptot Tj Tstg Value 100 75 150 500 500 1) 175 - 65 to + 175 Unit V V mA mA mW ℃ ℃ TCharacteristics at Ta = 25℃ Parameter MForward Voltage at IF = 5 mA at IF = 100 mA EReverse Current at VR = 20 V Sat VR= 75 V Symbol VF IR Min. 0.62 - - Max. 0.72 1 25 5 Unit V nA µA Reverse Breakdown Voltage tested with 100 µA Pulses V(BR)R 100 - V Capacitance at VR = 0, f = 1 MHz Ctot - 4 pF Reverse Recovery Time at IF = 10 mA to IR = 1 mA, VR = 6 V, R...