BLW78

DISCRETE SEMICONDUCTORS DATA SHEET BLW78 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB or B operated mobile, industrial and military transmitters in the h.f. and v.h.f. bands. It is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. It has a 1⁄2" flange envelope with a ceramic cap. All leads are isolated from the flange. BLW78 QUICK REFERENCE DATA R.F. performance up to Th = 25 °C MODE OF OPERATION c.w. (class-B) s.s.b. (class-A) s.s.b. (class-AB) Note 1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB. VCE V 28 26 28 3 0,05 IC IC(ZS) A − f MHz 150 28 28 100 35 (P.E.P.) 100 (P.E.P.) PL W > Gp dB 6 > − typ. 42 typ. 19,5 typ. 19,0 η % 70 d3(1) dB − typ. −40 typ. −30 PIN CONFIGURATION PINNING - SOT121B. PIN DESCRIPTION collector emitter base emitter handbook, halfpage 4 3 1 2 3 4 1 2 MLA876 Fig.1 Simplified outline. SOT121B. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. August 1986 2 Philips Semiconductors Product specification HF/VHF power transistor RATINGS Limiting values in accordance with the A...