BLW86

DISCRETE SEMICONDUCTORS DATA SHEET BLW86 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Matched hFE groups are available on request. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange. BLW86 QUICK REFERENCE DATA R.F. performance up to Th = 25 °C MODE OF OPERATION c.w. (class-B) s.s.b. (class-AB) s.s.b. (class-A) VCE V 28 28 26 f MHz 175 1,6 − 28 1,6 − 28 PL W 45 5−47,5 (P.E.P.) 17 (P.E.P.) > Gp dB 7,5 > − typ. 19 typ. 22 η % 70 typ. 45 zi Ω − − YL mS − − d3 dB − typ. −30 typ. −42 0,7 + j1,3 110 − j62 PIN CONFIGURATION halfpage PINNING - SOT123 PIN 1 DESCRIPTION collector emitter base emitter 1 4 c handbook, halfpage 2 3 4 e b MBB012 2 3 MSB057 Fig.1 Simplified outline and symbol. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. August 1986 2 Philips Semiconductors Product specification HF/VHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open ...