DISCRETE SEMICONDUCTORS
DATA SHEET
BLW90 UHF power transistor
Product specification August 1986
Philips Semiconductors...
DISCRETE SEMICONDUCTORS
DATA SHEET
BLW90 UHF power
transistor
Product specification August 1986
Philips Semiconductors
Product specification
UHF power
transistor
DESCRIPTION N-P-N silicon planar epitaxial
transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The
transistor is resistance stabilized and is guaranteed to withstand infinite VSWR at rated output power. High reliability is ensured by a gold sandwich metallization. The
transistor is housed in a 1⁄4" capstan envelope with a ceramic cap. All leads are isolated from the stud.
BLW90
QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit MODE OF OPERATION c.w. VCE V 28 f MHz 470 PL W 4 Gp dB > 11 η % > 55
PIN CONFIGURATION
PINNING - SOT122A. PIN 1 2 DESCRIPTION collector emitter base emitter
handbook, halfpage
4 1 3
3 4
2 Top view
MBK187
Fig.1 Simplified outline. SOT122A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
UHF power
transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (peak value); VBE = 0 open base Emitter-base voltage (open collector) Collector current d.c. or average (peak value); f > 1 MHz Total power dissipation (d.c. and r.f....