BLW96

DISCRETE SEMICONDUCTORS DATA SHEET BLW96 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated high power industrial and military transmitting equipment in the h.f. and v.h.f. band. The transistor presents excellent performance as a linear amplifier in s.s.b. applications. It is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Transistors are supplied in matched hFE groups. The transistor has a 1⁄2" flange envelope with a ceramic cap. All leads are isolated from the flange. BLW96 QUICK REFERENCE DATA R.F. performance up to Th = 25 °C MODE OF OPERATION s.s.b. (class-AB) c.w. (class-B) s.s.b. (class-A) Note 1. ηdt at 200 W P.E.P. VCE V 50 50 40 f MHz 1,6 − 28 108 28 PL W 25 − 200 (P.E.P.) > 200 typ. 50 (P.E.P.) typ. Gp dB 13,5 > 19 η % 40(1) < − typ. −40 < − 6,5 typ. 67 d3 dB −30 < − −40 d5 dB −30 IC(ZS) (IC) A 0,1 (6) (4) PIN CONFIGURATION PINNING - SOT121B. PIN DESCRIPTION collector emitter base emitter handbook, halfpage 4 3 1 2 3 4 1 2 MLA876 Fig.1 Simplified outline. SOT121B. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. August 1986 2 Philips Semiconductors Product specification HF/VHF power transistor RATINGS Limiting values in accordance ...