Document
BLX14
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLX14 is Designed for HF and VHF band applications.
PACKAGE STYLE .500 4L STUD (A)
.112 x 45° A Ø .630 NOM C E E D
FEATURES:
• PG = 13 dB min. at 15 W/1.6 MHz • d3 = -40 dB typ. at 15 W (PEP) • Omnigold™ Metalization System
B C
B E
G 1/4-28 UNF-2A F H
MAXIMUM RATINGS
IC VCBO VEBO VCEO PDISS TJ TSTG θJC 4.0 A 85 V 4.0 V 36 V 88 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 1.99 °C/W
DIM A B C D E F G H
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59 .545 / 13.84 .495 / 12.57 .003 / 0.08 .185 / 4.70 .497 / 12.62
.230 / 5.84 1.050 / 26.67 .555 / 14.10 .505 / 12.83 .007 / 0.18 .830 / 21.08 .198 / 5.03 .530 / 13.46
CHARACTERISTICS
SYMBOL
BVCBO BVCER BVCEO BVEBO hFE fT CC GP d3 IC = 25 mA IC = 25 mA IC = 50 mA IE = 10 mA VCE = 6.0 V VCE = 20 V VCB = 30 V
TC = 25 °C
NONETEST CONDITIONS
RBE = 5.0 Ω
MINIMUM TYPICAL MAXIMUM
85 85 36 4.0
UNITS
V V V V
IC = 1.4 A IC = 3.0 A f = 1.0 MHz
15 250 115 13
100
--MHz
125
pF dB dB
VCE = 28 V f = 1.6 MHz
ICQ =2.0 A
POUT = 15 W (PEP)
-40
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
.