BLY93H
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLY93H is Designed for Class C, 28 V High Band Applications...
BLY93H
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI BLY93H is Designed for Class C, 28 V High Band Applications up to 175 MHz.
PACKAGE STYLE .380 4L STUD
.112x45° A
FEATURES:
Common Emitter PG = 9.0 dB at 25 W/175 MHz Omnigold™ Metalization System
B
E E
ØC
C
C E E
I J
B
B
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θJC 3.0 A 65 V 35 V 4.0 V 70 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 2.5 °C/W
DIM A B C D E F G H I J
D
H
#8-32 UNC-2A F E
G
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94
.230 / 5.84
.385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVEBO ICES hFE COB GP fT IC = 50 mA IC = 10 mA IE = 10 mA VCE = 36 V VCE = 5.0 V VCB = 28 V VCE = 28 V VCB = 28 V
TC = 25 °C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
35 65 4.0 4.0
UNITS
V V V mA --pF
IC = 1.25 A f = 1.0 MHz f = 175 MHz IE = 200 mA f = 100 MHz
10 45 9.0 625
100
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dB MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change witout notice.
REV. A
1/1
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