MMDL914T1

High –Speed Switching Diode MMDL914T1 1 CATHODE 2 ANODE 1 2 CASE 477– 02, STYLE 1 SOD– 323 MAXIMUM RATINGS Rating Reverse Voltage Forward Current Peak Forward Surge Current THERMALCHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board,* T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature **FR-4 Minimum Pad Symbol VR IF I FM(surge) Symbol PD R θJA T J , T stg Value 100 200 500 Max 200 1.57 635 150 Unit Vdc mAdc mAdc Unit mW mW/°C °C/W °C DEVICE MARKING MMDL914T1 = 5D ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol Min OFFCHARACTERISTICS Reverse Breakdown Voltage (I R = 100 µAdc) Reverse Voltage Leakage Current (V R = 20Vdc) (V R = 75Vdc) Diode Voltage (V R =0, f =1.0MHz ) Forward Voltage (I F = 10 mAdc) Reverse Recovery Time (I F = I R = 10 mAdc ) (Figure 1) V (BR) IR CT VF t rr 100 — — — — — Max — 25 5.0 4.0 1.0 4.0 Unit Vdc nAdc µAdc pF Vdc ns ...