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SCT2H12NY

ROHM

N-channel SiC power MOSFET


Description
SCT2H12NY N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID PD 1700V 1.15 4A 44W Features 1) Low on-resistance 2) Fast switching speed 3) Long creepage distance with no center lead 4) Simple to drive 5) Pb-free lead plating ; RoHS compliant Application ・Auxilialy power supplies ・Switch mode power supplies Outline TO-268-2L (2) Inne...



ROHM

SCT2H12NY

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