SCT2H12NZ

SCT2H12NZ N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID PD 1700V 1.15 3.7A 35W Features 1) Low on-resistance 2) Fast switching speed 3) Long creepage distance 4) Simple to drive 5) Pb-free lead plating ; RoHS compliant Application Auxilialy power supplies Switch mode power supplies Outline TO-3PFM Inner circuit (1) (2) (3) (2) (1) Gate (2) Drain *1 (3) Source (1) *1 Body Diode (3) Packaging specifications Packaging Tube Reel size (mm) - Tape width (mm) Type Basic ordering unit (pcs) 30 Taping code - Marking SCT2H12NZ Absolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Tc = 25°C Tc = 100°C Pulsed drain current Gate - Source voltage (DC) Gate - Source surge voltage (Tsurge ˂ 300nsec) Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature Symbol VDSS ID *1 ID *1 ID,pulse *2 VGSS VGSS-surge*3 PD Tj Tstg Value 1700 3.7 2.6 9.2 6 to 22 10 to ...