BAS516

Switching Diodes Silicon Epitaxial Planar BAS516 1. Applications Ultra-High-Speed Switching 2. Packaging and Internal Circuit BAS516 1: Cathode 2: Anode ESC 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 100 V Reverse voltage VR 100 Peak forward current IFM 500 mA Average rectified current IO 250 Non-repetitive peak forward surge current IFSM (Note 1) 1A Power dissipation PD (Note 2) 150 mW Junction temperature Tj 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the ...