Silicon Epitaxial Planar Switching Diode
Features
* Small package * Low forward voltage * Fast reverse recovery time * Small total capacitance * Ultra high speed...
Description
Features
* Small package * Low forward voltage * Fast reverse recovery time * Small total capacitance * Ultra high speed switching application * Marking Code: D3
Maximum Ratings (TA=25℃ unless otherwise noted)
Parameter Maximum Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current Maximum Peak Forward Current Non-repetitive Peak Forward Surge Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Range
1SS187
Silicon Epitaxial Planar Switching Diode
A D
CB
F
E
GH J
SOT-23
INCHES
MM
DIM
MIN MAX MIN MAX
A
0.110
0.120
2.80
3.04
B
0.087
0.102
2.20
2.60
C
0.047
0.055
1.20
1.40
D
0.035
0.04
0.89
1.02
E
0.070
0.080
1.78
2.04
F
--- 0.004 ---
0.10
G
0.035
0.047
0.89
1.20
H
0.003
0.008
0.08
0.19
J
0.015
0.02
0.37
0.51
Symbol VRM VR IF(AV) IFM IFSM Ptot Tj Tstg
Value 85 80 100 300 2 350 150
- 55 to + 150
Unit V V mA mA A
mW ℃ ℃
Version: 6.1
www.jgdsemi.com
1SS187
Silicon Epitaxial Planar Switchi...
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