SiT8008B Programmable Oscillator Datasheet

SiT8008B Datasheet, PDF, Equivalent


Part Number

SiT8008B

Description

Low Power Programmable Oscillator

Manufacture

Sitime

Total Page 17 Pages
Datasheet
Download SiT8008B Datasheet


SiT8008B
SiT8008B
Low Power Programmable Oscillator
ow Power, Standard Frequency Oscillator
Features
Any frequency between 1 MHz and 110 MHz accurate to
6 decimal places
100% pin-to-pin drop-in replacement to quartz-based XO
Excellent total frequency stability as low as ±20 ppm
Operating temperature from -40°C to 85°C. For 125°C and/
or -55°C options, refer to SiT1618, SiT8918, SiT8920
Low power consumption of 3.5 mA typical at 1.8V
Standby mode for longer battery life
Fast startup time of 5 ms
LVCMOS/HCMOS compatible output
Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5,
5.0 x 3.2, 7.0 x 5.0 mm x mm
Instant samples with Time Machine II and Field
Programmable Oscillators
RoHS and REACH compliant, Pb-free, Halogen-free and
Antimony-free
For AEC-Q100 oscillators, refer to SiT8924 and SiT8925
Applications
Ideal for DSC, DVC, DVR, IP CAM, Tablets, e-Books,
SSD, GPON, EPON, etc.
Ideal for high-speed serial protocols such as: USB,
SATA, SAS, Firewire, 100M / 1G / 10G Ethernet, etc.
Electrical Characteristics
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise
stated. Typical values are at 25°C and nominal supply voltage.
Table 1. Electrical Characteristics
Parameters
Output Frequency Range
Frequency Stability
Symbol
f
F_stab
Operating Temperature Range T_use
Supply Voltage
Vdd
Current Consumption
OE Disable Current
Standby Current
Idd
I_OD
I_std
Min.
1
-20
-25
-50
-20
-40
1.62
2.25
2.52
2.7
2.97
2.25
Typ.
Max.
Unit
Condition
Frequency Range
110 MHz
Frequency Stability and Aging
+20 ppm Inclusive of initial tolerance at 25°C, 1st year aging at 25°C, and
+25
ppm
variations over operating temperature, rated power supply voltage
and load.
+50 ppm
Operating Temperature Range
+70 °C Extended Commercial
+85 °C Industrial
Supply Voltage and Current Consumption
1.8 1.98 V Contact SiTime for 1.5V support
2.5 2.75 V
2.8 3.08 V
3.0 3.3 V
3.3 3.63 V
3.63
V
3.8 4.5 mA No load condition, f = 20 MHz, Vdd = 2.8V to 3.3V
3.7 4.2 mA No load condition, f = 20 MHz, Vdd = 2.5V
3.5 4.1 mA No load condition, f = 20 MHz, Vdd = 1.8V
4.2 mA Vdd = 2.5V to 3.3V, OE = GND, Output in high-Z state
4.0 mA Vdd = 1.8V, OE = GND, Output in high-Z state
2.1 4.3 A S̅ T̅ ̅ = GND, Vdd = 2.8V to 3.3V, Output is weakly pulled down
1.1 2.5 A S̅ T̅ ̅ = GND, Vdd = 2.5V, Output is weakly pulled down
0.2 1.3 A S̅ T̅ ̅ = GND, Vdd = 1.8V, Output is weakly pulled down
Rev 1.04
January 30, 2018
www.sitime.com

SiT8008B
SiT8008B Low Power Programmable Oscillator
Table 1. Electrical Characteristics (continued)
Parameters
Duty Cycle
Rise/Fall Time
Output High Voltage
Output Low Voltage
Input High Voltage
Input Low Voltage
Input Pull-up Impedance
Startup Time
Enable/Disable Time
Resume Time
RMS Period Jitter
Peak-to-peak Period Jitter
RMS Phase Jitter (random)
Symbol
DC
Tr, Tf
VOH
VOL
Min.
45
90%
VIH
VIL
Z_in
70%
50
2
T_start
T_oe
T_resume
T_jitt
T_pk
T_phj
Typ.
Max.
Unit
Condition
LVCMOS Output Characteristics
55 % All Vdds. See Duty Cycle definition in Figure 3 and Footnote 6
1 2 ns Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80%
1.3 2.5 ns Vdd =1.8V, 20% - 80%
2 ns Vdd = 2.25V - 3.63V, 20% - 80%
– – Vdd IOH = -4 mA (Vdd = 3.0V or 3.3V)
IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOH = -2 mA (Vdd = 1.8V)
10% Vdd IOL = 4 mA (Vdd = 3.0V or 3.3V)
IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOL = 2 mA (Vdd = 1.8V)
Input Characteristics
– – Vdd
30%
Vdd
87 150 k
– – M
Pin 1, OE or S̅ T̅ ̅
Pin 1, OE or S̅ T̅ ̅
Pin 1, OE logic high or logic low, or S̅ T̅ ̅ logic high
Pin 1, S̅ T̅ ̅ logic low
Startup and Resume Timing
5 ms Measured from the time Vdd reaches its rated minimum value
130 ns f = 110 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles
5 ms Measured from the time S̅ T̅ ̅ pin crosses 50% threshold
Jitter
1.8 3 ps f = 75 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V
1.8 3 ps f = 75 MHz, Vdd = 1.8V
12 25 ps f = 75 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V
14 30 ps f = 75 MHz, Vdd = 1.8V
0.5 0.9 ps f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz
1.3 2 ps f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz
Table 2. Pin Description
Pin Symbol
Output Enable
1 OE/S̅ T̅ ̅ /NC
Standby
No Connect
2 GND
3 OUT
4 VDD
Power
Output
Power
Functionality
H[1]: specified frequency output
L: output is high impedance. Only output driver is disabled.
H[1]: specified frequency output
L: output is low (weak pull down). Device goes to sleep mode. Supply
current reduces to I_std.
Any voltage between 0 and Vdd or Open[1]: Specified frequency
output. Pin 1 has no function.
Electrical ground
Oscillator output
Power supply voltage[2]
Top View
OE/ST/NC
Figure 1. Pin Assignments
Notes:
1. In OE or S̅ T̅ ̅ mode, a pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option.
2. A capacitor of value 0.1 µF or higher between Vdd and GND is required.
Rev 1.04
Page 2 of 17
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Features SiT8008B Low Power Programmable Oscillat or ow Power, Standard Frequency Oscill ator Features  Any frequency between 1 MHz and 110 MHz accurate to 6 decima l places  100% pin-to-pin drop-in re placement to quartz-based XO  Excell ent total frequency stability as low as ±20 ppm  Operating temperature fro m -40°C to 85°C. For 125°C and/ or - 55°C options, refer to SiT1618, SiT891 8, SiT8920  Low power consumption of 3.5 mA typical at 1.8V  Standby mod e for longer battery life  Fast star tup time of 5 ms  LVCMOS/HCMOS compa tible output  Industry-standard pack ages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm x mm  Instan t samples with Time Machine II and Fiel d Programmable Oscillators  RoHS and REACH compliant, Pb-free, Halogen-free and Antimony-free  For AEC-Q100 osc illators, refer to SiT8924 and SiT8925 Applications  Ideal for DSC, DVC, D VR, IP CAM, Tablets, e-Books, SSD, GPON , EPON, etc.  Ideal for high-speed serial protocols such as:.
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