Thin Oscillator. SiT8003XT Datasheet


SiT8003XT Oscillator. Datasheet pdf. Equivalent


SiT8003XT


Low Power Ultra Thin Oscillator
SiT8003XT
Low Power Ultra Thin Oscillator

■ Features, Benefits and Applications

■ The world’s thinnest oscillator, 0.25 mm (typical) height ■ Typical current consumption of 3.2 mA in active mode ■ 1 - 110 MHz frequency range ■ LVCMOS/LVTTL compatible output ■ Standby current as low as 0.5 µA ■ Fast resume time of 3.0 ms typical ■ Standby or output enable modes ■ Outstanding mechanical robustness for portable applications ■ All-silicon device with outstanding reliability of 2 FIT (10x improvement over quartz-based devices),
enhancing system mean-time-to-failure (MTBF) ■ Ultra short lead time ■ Ideal for ultra thin applications: High Capacilty (HC) SIM cards, Smart cards, Near Field Communications
(NFC), SD cards, multi-chip modules (MCM) and System-in-Package (SiP)

■ Specifications

Electrical Characteristics

Parameter
Output Frequency Range Frequency Tolerance

Symbol
f F_tol

Aging Operating Temperature Range

Ag T_use

Supply Voltage

Vdd

Current Con...



SiT8003XT
SiT8003XT
Low Power Ultra Thin Oscillator
Features, Benefits and Applications
The world’s thinnest oscillator, 0.25 mm (typical) height
Typical current consumption of 3.2 mA in active mode
1 - 110 MHz frequency range
LVCMOS/LVTTL compatible output
Standby current as low as 0.5 µA
Fast resume time of 3.0 ms typical
Standby or output enable modes
Outstanding mechanical robustness for portable applications
All-silicon device with outstanding reliability of 2 FIT (10x improvement over quartz-based devices),
enhancing system mean-time-to-failure (MTBF)
Ultra short lead time
Ideal for ultra thin applications: High Capacilty (HC) SIM cards, Smart cards, Near Field Communications
(NFC), SD cards, multi-chip modules (MCM) and System-in-Package (SiP)
Specifications
Electrical Characteristics
Parameter
Output Frequency Range
Frequency Tolerance
Symbol
f
F_tol
Aging
Operating Temperature Range
Ag
T_use
Supply Voltage
Vdd
Current Consumption
Standby Current
Duty Cycle
Rise/Fall Time
Output Voltage High
Idd
I_std
DC
Tr, Tf
VOH
Min.
1
-100
–1.0
-20
-40
1.71
2.25
2.52
2.97
45
40
90%
Output Voltage Low
VOL
Output Load
Input Voltage High
Input Voltage Low
Startup Time
Resume Time
RMS Period Jitter
RMS Phase Jitter (random)
Ld
VIH
VIL
T_osc
T_resume
T_jitt
T_phj
70%
Typ.
1.8
2.5
2.8
3.3
3.7
3.2
2.4
1.2
0.4
50
50
1
1.3
3.0
0.6
0.8
Max.
110
+100
1.0
+70
+85
1.89
2.75
3.08
3.63
4.1
3.5
4.3
2.2
0.8
55
60
2
2.5
10%
15
30%
10
3.8
4.0
5.5
Unit
MHz
PPM
PPM
°C
°C
V
V
V
V
mA
mA
μA
μA
μA
%
%
ns
ns
Vdd
Vdd
pF
Vdd
Vdd
ms
ms
ps
ps
ps
ps
Condition
Inclusive of: Initial stability, operating temperature, rated power,
supply voltage change, load change, shock and vibration.
1st year at 25°C
Extended Commercial
Industrial
No load condition, f = 20 MHz, Vdd = 2.5 V, 2.8 V or 3.3 V
No load condition, f = 20 MHz, Vdd = 1.8 V
ST = GND, Vdd = 3.3 V, Output is Weakly Pulled Down
ST = GND, Vdd = 2.5 or 2.8 V, Output is Weakly Pulled Down
ST = GND, Vdd = 1.8 V, Output is Weakly Pulled Down
All Vdds. f <= 75 MHz
All Vdds. f > 75 MHz
20% - 80% Vdd=2.5 V, 2.8 V or 3.3 V, 15 pf load
20% - 80% Vdd=1.8V , 15p f load
IOH = -4 mA (Vdd = 3.3 V)
IOH = -3 mA (Vdd = 2.8 V and Vdd = 2.5 V)
IOH = -2 mA (Vdd = 1.8 V)
IOL = 4 mA (Vdd = 3.3 V)
IOL = 3 mA (Vdd = 2.8 V and Vdd = 2.5 V)
IOL = 2 mA (Vdd = 1.8 V)
At maximum frequency and supply voltage. Contact SiTime for
higher output load option
Pin 1, OE or ST
Pin 1, OE or ST
Measured from the time Vdd reaches its rated minimum value
Measured from the time ST pin crosses 50% threshold
f = 75 MHz, Vdd = 2.5 V, 2.8 V or 3.3 V
f = 75 MHz, Vdd = 1.8 V
f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz,
VDD = 2.5 V, 2.8 V, or 3.3 V
f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz,
VDD = 1.8 V
SiTime Corporation
Rev. 1.31
990 Almanor Avenue
Sunnyvale, CA 94085
(408) 328-4400
www.sitime.com
Revised August 05, 2010

SiT8003XT
SiT8003XT
Low Power Ultra Thin Oscillator
Specifications (Cont.)
Pin Description Tables
Pin #1 Functionality
OE
H or Open[1]: specified frequency output
L: output is high impedance
ST
H or Open: specified frequency output
L: output is low level (weak pull down) Oscillation stops
Pin Map
Pin Connection
1 OE/ST
2 GND
3 CLK
4 VDD
Absolute Maximum Ratings
Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual performance of the IC
is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter
Storage Temperature
VDD
Electrostatic Discharge
Theta JA ( with copper plane on VDD and GND)
Theta JC (with PCB traces of 0.010 inch to all pins)
Soldering Temperature (follow standard Pb free soldering guidelines)
Number of Program Writes
Program Retention over -40 to 125°C, Process, VDD (0 to 3.65 V)
Min.
-65
-0.5
1,000+
Max.
150
4
6000
75
24
260
1
Unit
°C
V
V
°C/W
°C/W
°C
NA
years
Environmental Compliance
Mechanical Shock
Mechanical Vibration
Temperature Cycle
Solderability
Moisture Sensibility Level
Parameter
Condition/Test Method
MIL-STD-883F, Method 2002
MIL-STD-883F, Method 2007
JESD22, Method A104
MIL-STD-883F, Method 2003
MSL1 @ 260°C
Startup and Resume Timing Diagram
90% Vdd: 2.5/2.8/3.3 V parts
95% Vdd: 1.8 V parts
Vdd
Pin 4 Voltage
T_start
CLK Output
50% Vdd
Vdd ST Voltage
T_resume
CLK Output
T_start: Time to start from power-off
(ST/OE Mode)
Note:
1. In 1.8 V mode, a resistor of <100 kbetween OE pin and VDD is recommended.
T_resume: Time to resume from ST
(ST Mode Only)
Rev. 1.31
Page 2 of 4
www.sitime.com




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