DatasheetsPDF.com

2SD1412

Silicon NPN Power Transistor

Description

isc Silicon NPN Power Transistor 2SD1412 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) ·Complement to Type 2SB1019 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching applications. ·Power amplifier a...

INCHANGE

Download 2SD1412 Datasheet

Similar Datasheet

2SD1400 NPN Transistor - INCHANGE
2SD1401 NPN TRIPLE DIFFUSED PLANAR TYPE SILICON TRANSISTOR - Sanyo Semicon Device
2SD1402 NPN Transistor - INCHANGE
2SD1402 SILICON POWER TRANSISTOR - SavantIC
2SD1403 NPN Transistor - INCHANGE
2SD1403 NPN Triple Diffused Planar Silicon Transistor - Sanyo
2SD1403 SILICON POWER TRANSISTOR - SavantIC
2SD1404 Silicon NPN Power Transistor - INCHANGE
2SD1405 Silicon NPN Transistor - Toshiba
2SD1405 NPN Transistor - INCHANGE

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)