BPV11F

www.vishay.com BPV11F Vishay Semiconductors Silicon NPN Phototransistor 12784 DESCRIPTION BPV11F is a silicon NPN phototransistor with high radiant sensitivity in black, T-1¾ plastic package with base terminal and daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters. FEATURES Package type: leaded Package form: T-1¾ Dimensions (in mm): Ø 5 High radiant sensitivity Daylight blocking filter matched with 940 nm emitters Fast response times Angle of half sensitivity:  = ± 15° Base terminal connected Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Detector for industrial electronic circuitry, measurement and control PRODUCT SUMMARY COMPONENT BPV11F Ica (mA) 9 Note Test condition see table “Basic Characteristics”  (deg) ± 15 0.5 (nm) 900 to 980 ORDERING INFORMATION ORDERING CODE BPV11F Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1¾ ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Collector base voltage Collector emitter voltage Emitter base voltage Collector current Collector peak current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient tp/T = 0.5, tp  10 ms Tamb  47 °C t  5 s, 2 mm from body Connected with Cu wire, 0.14 mm2 VCBO VCEO VEBO...