QN3109M6N MOSFET Datasheet

QN3109M6N Datasheet, PDF, Equivalent


Part Number

QN3109M6N

Description

N-Channel 30V Fast Switching MOSFET

Manufacture

UBIQ

Total Page 6 Pages
Datasheet
Download QN3109M6N Datasheet


QN3109M6N
QN3109M6N
NN-Channel 30V Fast Switching MOSFET
General Description
The QN3109M6N is the highest performance
trench N-Channel MOSFET with extreme high
cell density, which provide excellent RDSON
and gate charge for most of the synchronous
buck converter applications .
The QN3109M6N meet the RoHS and Green
Product requirement with full function reliability
approved.
Features
Advanced high cell density Trench technology
Super Low Gate Charge
Green Device Available
Product Summary
BVDSS
30V
RDSON
(VGS=10V)
1.5mΩ
ID
(TC=25)
154A
Applications
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
Networking DC-DC Power System
Load Switch
PRPAK 5X6 Pin Configuration
D
Absolute Maximum Ratings
SS S G
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
ID@TA=25
ID@TA=70
IDM
EAS
IAS
PD@TC=25
PD@TA=25
TSTG
TJ
Thermal Data
Symbol
RθJA
RθJC
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1,7
Continuous Drain Current, VGS @ 10V1,7
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Thermal Resistance Junction-Ambient1
Thermal Resistance Junction-Case1
Rating
30
±20
154
97
29
23
308
270.1
73.5
56
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
A
mJ
A
W
W
Typ.
---
---
Max.
62
2.2
Unit
/W
/W
Confidential
All information provided in this document is subjected to important notice
1
Rev A.01 D120216P

QN3109M6N
QN3109M6N
NN-Channel 30V Fast Switching MOSFET
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VGS=10V , ID=30A
VGS=4.5V , ID=15A
VGS=VDS , ID =250uA
VDS=24V , VGS=0V , TJ=25
VDS=24V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=5V , ID=15A
VDS=0V , VGS=0V , f=1MHz
VDS=15V , VGS=10V , ID=15A
VDS=15V , VGS=4.5V , ID=15A
VDD=15V , VGS=10V , RG=3.3
ID=15A
VDS=15V , VGS=0V , f=1MHz
Min.
30
---
---
---
1.2
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.008
1.2
1.9
---
-5.3
---
---
---
62
0.9
47.6
21.8
6.9
8.0
12.1
43.8
37.1
9.0
3006
1941
67
Max.
---
---
1.5
2.5
2.5
---
1
5
±100
---
---
---
---
---
---
---
---
---
---
---
---
---
Unit
V
V/
m
V
mV/
uA
nA
S
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy5
Conditions
Min.
VDD=25V , L=0.1mH , IAS= 42.1A 88.62
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
Parameter
Conditions
Min. Typ.
IS Continuous Source Current1,6
ISM Pulsed Source Current2,6
VSD Diode Forward Voltage2
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
--- ---
--- ---
--- ---
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
---
IF=15A , dI/dt=100A/µs , TJ=25
---
159
194
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH
4.The power dissipation is limited by 150junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
7.The maximum current rating is package limited.
All information provided in this document is subjected to important notice
Max.
154
308
1.2
---
---
Unit
A
A
V
nS
nC
Confidential
2 Rev A.01 D120216P


Features QN3109M6N NN-Channel 30V Fast Switching MOSFET General Description The QN3109M 6N is the highest performance trench N- Channel MOSFET with extreme high cell d ensity, which provide excellent RDSON a nd gate charge for most of the synchron ous buck converter applications . The Q N3109M6N meet the RoHS and Green Produc t requirement with full function reliab ility approved. Features Advanced high cell density Trench technology Super Lo w Gate Charge Green Device Available P roduct Summary BVDSS 30V RDSON (VGS=1 0V) 1.5mΩ ID (TC=25℃) 154A Applic ations High Frequency Point-of-Load Syn chronous Buck Converter for MB/NB/UMPC/ VGA Networking DC-DC Power System Load Switch PRPAK 5X6 Pin Configuration D Absolute Maximum Ratings SS S G Symbo l VDS VGS ID@TC=25℃ ID@TC=100℃ ID@T A=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=2 5℃ PD@TA=25℃ TSTG TJ Thermal Data S ymbol RθJA RθJC Parameter Drain-Sour ce Voltage Gate-Source Voltage Continuo us Drain Current, VGS @ 10V1,7 Continuous Drain Current, VGS @ .
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