BPW34 Photodiode Datasheet

BPW34 Datasheet, PDF, Equivalent


Part Number

BPW34

Description

Silicon PIN Photodiode

Manufacture

Vishay Telefunken

Total Page 5 Pages
Datasheet
Download BPW34 Datasheet


BPW34
www.vishay.com
BPW34, BPW34S
Vishay Semiconductors
Silicon PIN Photodiode
94 8583
DESCRIPTION
BPW34 is a PIN photodiode with high speed and high
radiant sensitivity in miniature, flat, top view, clear plastic
package. It is sensitive to visible and near infrared radiation.
BPW34S is packed in tubes, specifications like BPW34.
FEATURES
• Package type: leaded
• Package form: top view
• Dimensions (L x W x H in mm): 5.4 x 4.3 x 3.2
• Radiant sensitive area (in mm2): 7.5
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 65°
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• High speed photo detector
PRODUCT SUMMARY
COMPONENT
BPW34
BPW34S
Ira (μA)
50
50
Note
• Test condition see table “Basic Characteristics”
ϕ (deg)
± 65
± 65
λ0.1 (nm)
430 to 1100
430 to 1100
ORDERING INFORMATION
ORDERING CODE
BPW34
BPW34S
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
Tube
REMARKS
MOQ: 3000 pcs, 3000 pcs/bulk
MOQ: 1800 pcs, 45 pcs/tube
PACKAGE FORM
Top view
Top view
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Tamb 25 °C
t3s
Connected with Cu wire, 0.14 mm2
VR
PV
Tj
Tamb
Tstg
Tsd
RthJA
VALUE
60
215
100
- 40 to + 100
- 40 to + 100
260
350
UNIT
V
mW
°C
°C
°C
°C
K/W
Rev. 2.1, 23-Aug-11
1 Document Number: 81521
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BPW34
www.vishay.com
BPW34, BPW34S
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Temperature coefficient of Vo
Short circuit current
Temperature coefficient of Ik
Reverse light current
Angle of half sensitivity
IR = 100 μA, E = 0
VR = 10 V, E = 0
VR = 0 V, f = 1 MHz, E = 0
VR = 3 V, f = 1 MHz, E = 0
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
EA = 1 klx
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
EA = 1 klx, VR = 5 V
Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V
V(BR)
Iro
CD
CD
Vo
TKVo
Ik
Ik
TKIk
Ira
Ira
ϕ
60
40
Wavelength of peak sensitivity
Range of spectral bandwidth
Noise equivalent power
Rise time
Fall time
VR = 10 V, λ = 950 nm
VR = 10 V, RL = 1 kΩ, λ = 820 nm
VR = 10 V, RL = 1 kΩ, λ = 820 nm
λp
λ0.1
NEP
tr
tf
TYP.
2
70
25
350
- 2.6
70
47
0.1
75
50
± 65
900
430 to 1100
4 x 10-14
100
100
MAX.
30
40
UNIT
V
nA
pF
pF
mV
mV/K
μA
μA
%/K
μA
μA
deg
nm
nm
W/Hz
ns
ns
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
1.4
100
10
VR = 10 V
1
20 40 60 80 100
94 8403
Tamb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
1.2 VR = 5 V
λ = 950 nm
1.0
0.8
0.6
0
94 8416
20 40 60 80 100
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Rev. 2.1, 23-Aug-11
2 Document Number: 81521
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Features www.vishay.com BPW34, BPW34S Vishay Sem iconductors Silicon PIN Photodiode 94 8583 DESCRIPTION BPW34 is a PIN photod iode with high speed and high radiant s ensitivity in miniature, flat, top view , clear plastic package. It is sensitiv e to visible and near infrared radiatio n. BPW34S is packed in tubes, specifica tions like BPW34. FEATURES • Package type: leaded • Package form: top vie w • Dimensions (L x W x H in mm): 5.4 x 4.3 x 3.2 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivi ty • High radiant sensitivity • Sui table for visible and near infrared rad iation • Fast response times • Angl e of half sensitivity: ϕ = ± 65° • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC N ote ** Please see document “Vishay Ma terial Category Policy”: www.vishay.c om/doc?99902 APPLICATIONS • High spee d photo detector PRODUCT SUMMARY COMPO NENT BPW34 BPW34S Ira (μA) 50 50 Not e • Test condition see table “Basic Characteristics” ϕ (deg) ± 65 ± 65 λ0.1 (nm) 430 to 110.
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