BPW41 Photodiode Datasheet

BPW41 Datasheet, PDF, Equivalent


Part Number

BPW41

Description

Silicon PIN Photodiode

Manufacture

Vishay Telefunken

Total Page 5 Pages
Datasheet
Download BPW41 Datasheet


BPW41
Silicon PIN Photodiode
Description
BPW41N is a high speed and high sensitive PIN photo-
diode in a flat side view plastic package.
The epoxy package itself is an IR filter, spectrally
matched to GaAs or GaAs on GaAlAs IR emitters
(l p = 950 nm).
The large active area combined with a flat case gives
a high sensitivity at a wide viewing angle.
Features
D Large radiant sensitive area (A=7.5 mm2)
D Wide angle of half sensitivity ϕ = ± 65°
D High radiant sensitivity
D Fast response times
D Small junction capacitance
D Plastic case with IR filter (l=950 nm)
D Suitable for near infrared radiation
Applications
High speed photo detector
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Reverse Voltage
Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
xTamb 25 °C
xt 5 s
BPW41N
Vishay Telefunken
94 8480
Symbol
VR
PV
Tj
Tstg
Tsd
RthJA
Value
60
215
100
–55...+100
260
350
Unit
V
mW
°C
°C
°C
K/W
Document Number 81522
Rev. 2, 20-May-99
www.vishay.de FaxBack +1-408-970-5600
1 (5)

BPW41
BPW41N
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Breakdown Voltage
Test Conditions
mIR = 100 A, E = 0
Symbol Min
V(BR) 60
Typ Max Unit
V
Reverse Dark Current
VR = 10 V, E = 0
Iro
2 30 nA
Diode Capacitance
VR = 0 V, f = 1 MHz, E = 0
CD
70
pF
Open Circuit Voltage
Temp. Coefficient of Vo
Short Circuit Current
Temp. Coefficient of Ik
Reverse Light Current
VR = 3 V, f = 1 MHz, E = 0
lEe = 1 mW/cm2, = 950 nm
lEe = 1 mW/cm2, = 950 nm
lEe = 1 mW/cm2, = 950 nm
lEe = 1 mW/cm2, = 950 nm
lEe = 1 mW/cm2,
= 950 nm, VR = 5 V
CD
Vo
TKVo
Ik
TKIk
Ira
43
25
350
–2.6
38
0.1
45
40 pF
mV
mV/K
mA
%/K
mA
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Noise Equivalent Power
Rise Time
Fall Time
lVR = 10 V, = 950 nm
WVR = 10 V, RL = 1k ,
l = 820 nm
WVR = 10 V, RL = 1k ,
l = 820 nm
ϕ
ll0p.5
NEP
tr
tf
±65
950
870...1050
4x10–14
100
100
deg
nm
nm
W/Hz
ns
ns
Typical Characteristics (Tamb = 25_C unless otherwise specified)
1000
1.4
100
10
1
20 40
VR=10V
60 80
100
94 8403
Tamb – Ambient Temperature ( °C )
Figure 1. Reverse Dark Current vs. Ambient Temperature
l1.2 VR=5V
=950nm
1.0
0.8
0.6
0 20 40 60 80 100
94 8409
Tamb – Ambient Temperature ( °C )
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
www.vishay.de FaxBack +1-408-970-5600
2 (5)
Document Number 81522
Rev. 2, 20-May-99


Features BPW41N Vishay Telefunken Silicon PIN Ph otodiode Description BPW41N is a high s peed and high sensitive PIN photodiode in a flat side view plastic package. Th e epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters (l p = 950 nm). The large active area combined with a flat case gives a high sensitivity at a wide viewing angle. Features D D D D D D D Large radiant sensitive area (A=7.5 mm 2) Wide angle of half sensitivity ϕ = ± 65° High radiant sensitivity Fast r esponse times Small junction capacitanc e Plastic case with IR filter (l=950 nm ) Suitable for near infrared radiation 94 8480 Applications High speed photo detector Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Power Dissipation Junction Temperature Stora ge Temperature Range Soldering Temperat ure Thermal Resistance Junction/Ambient Test Conditions Tamb Symbol VR PV Tj T stg Tsd RthJA Value 60 215 100 –55... +100 260 350 Unit V mW °C °C °C K/W x 25 °C t x5s Document Numbe.
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