MMS9014

Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMS9014 Features SOT-23 Plastic-Encapsulate Transistors Capable of 0.2Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.1A Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150OC Marking Code: J6 NPN Silicon Plastic-Encapsulate Transistor Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter OFF CHARACTERISTICS Min Max Units V(BR)CBO Collector-Base Breakdown Voltage (IC=100uAdc, IE=0) V(BR)CEO Collector-Emitter Breakdown Voltage (IC=0.1mAdc, IB=0) V(BR)EBO Emitter-Base Breakdown Voltage (IE=100uAdc, IC=0) ICBO Collector Cutoff Current (VCB=50Vdc, IE=0) ICEO Collector Cutoff Current (VCE=35Vdc, IB=0) IEBO Emitter Cutoff Current (VEB=3.0Vdc, IC=0) ON CHARACTERISTICS 50 --- Vdc 45 --- Vdc 5.0 --- Vdc --- 0.1 uAdc --- 0.1 uAdc --- 0.1 uAdc hFE(1) DC Current Gain (IC=1.0mAdc, VCE=5.0V...