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M02N601D1

CITC

Silicon N-Channel Power MOSFET


Description
M02N601D1 600V N-Channel General Purpose Switching Device Applications ■ Features 600V, 2.0A, RDS(on) = maximum 5Ω@VGS = 10V. 100% avalanche, EAS tested. Suffix "G" indicates Halogen-free part, ex.M02N601D1G. ■ Outline TO-251 0.264(6.7) 0.248(6.3) 0.205(5.2) 0.189(4.8) 0.060(1.52) 0.058(1.48) 0.098(2.5) 0.083(2.1) 0.024(0.6) 0.016(0.4) 0.193(4.9) ...



CITC

M02N601D1

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