N-Channel Enhancement Mode MOSFET
■ Features
• 60V/50A RDS(ON) = 10.8mΩ (max.) @ VGS= 10V RDS(ON) = 13.5mΩ (max.) @ VGS= 4.5V
• Reliable and Rugged. • Lea...
Description
■ Features
60V/50A RDS(ON) = 10.8mΩ (max.) @ VGS= 10V RDS(ON) = 13.5mΩ (max.) @ VGS= 4.5V
Reliable and Rugged. Lead free and green device available
(RoHS compliant).
■ Application
Secondary side synchronous rectification. DC-DC converter. Motor control. Load Switching.
MSQ108N06G
N-Channel Enhancement Mode MOSFET
■ Pin Description
DDDD
SS SG
DFN5x6-8
(5,6,7,8) DD DD
Pin 1
(4) G
■ Absolute Maximum Ratings (TA = 25OC unless otherwise specified)
PARAMETER
CONDITIONS
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note:1) Gate-Source Voltage
TC = 25OC TC = 100OC TC = 25OC
Diode Continuous Forward Current Avalanche Current, single pulse (Note:2)
TC = 25OC L=0.5mH
Avalanche Energy, single pulse (Note:2)
L=0.5mH
Maximum Power Dissipation Thermal Resistance-Junction to Ambient(Note:3)
TC = 25OC TC = 100OC t ≤ 10s
Steady State
Operating and Storage Temperature Range
Maximum Power Dissipation
Continuous Drain Current Th...
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