Bridge Rectifier
SEMICONDUCTOR
TECHNICAL DATA
DF2005S ~ DF210S
Bridge Rectifier
■ Features
● Io 2.0A
● VRRM
50V~1000V
● Glass pass...
Description
SEMICONDUCTOR
TECHNICAL DATA
DF2005S ~ DF210S
Bridge Rectifier
■ Features
● Io 2.0A
● VRRM
50V~1000V
● Glass passivated chip
■ Outline Dimensions and Mark
■ Applications
● General purpose 1 phase Bridge rectifier applications
■Limiting Values(Absolute Maximum Rating)
Item
Symbol Unit
Repetitive Peak Reverse Voltage
VRRM
V
Conditions
DF2 005S 01S 02S 04S 06S 08S 10S
50 100 200 400 600 800 1000
Average Rectified Output Current
Surge(Nonrepetitive)Forward Current
Current Squared Time
Ta=25℃ IO A 60Hz sine wave, On glass-epoxi substrate
R-load, Ta=25℃
IFSM
A
60HZ sine wave, 1 cycle, Tj=25℃
I2t A2S 1ms≤t<8.3ms Tj=25℃,Rating of per diode
2.0 60 15
Storage Temperature Junction Temperature
Tstg ℃ Tj ℃
-55 ~+150 -55 ~+150
■Electrical Characteristics Ta=25℃ Unless otherwise specified
Item
Symbol Unit
Test Condition
Peak Forward Voltage
VFM V IFM=2.0A, Pulse measurement, Rating of per diode
Peak Reverse Current
IRRM μA VR...
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