FCPF22N60NT

FCP22N60N / FCPF22N60NT — N-Channel SupreMOS® MOSFET FCP22N60N / FCPF22N60NT N-Channel SupreMOS® MOSFET 600 V, 22 A, 165 mΩ November 2013 Features BVDSS > 650 V @ TJ = 150oC RDS(on) = 140 mΩ (Typ.) @ VGS = 10 V, ID = 11 A Ultra Low Gate Charge (Typ. Qg = 45 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 196.4 pF) 100% Avalanche Tested RoHS Compliant Application LCD/LED/PDP TV Lighting Solar Inverter AC-DC Power Supply Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industria...