D3SB60 BRIDGE RECTIFIERS Datasheet

D3SB60 Datasheet, PDF, Equivalent


Part Number

D3SB60

Description

SILICON BRIDGE RECTIFIERS

Manufacture

EIC

Total Page 2 Pages
Datasheet
Download D3SB60 Datasheet


D3SB60
www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686
SGS TH07/1033
D3SB10 - D3SB80
SILICON BRIDGE RECTIFIERS
PRV : 100 - 800 Volts
Io : 4.0 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
* Very good heat dissipation
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 4.28 grams
RBV4
0.150 (3.8)
C3
0.996 (25.3)
0.134 (3.4)
0.189 (4.8)
0.972 (24.7)
0.173 (4.4)
+~ ~
0.075 (1.9)
0.060 (1.5)
0.303 (7.7)
0.287 (7.3)
0.043 (1.1)
0.035 (0.9)
0.032 (0.8)
0.043 (1.1)
0.114 (2.9)
0.098 (2.5)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherwise specifie.
Single phase, half wave, 60 Hz, resistive or inductive load
For capacitive load, derate current by 20%
RATING
Maximum Reverse Voltage
Maximum Average Forward Current Tc = 25°C
Maximum Peak Forward Surge Current
Maximum Forward Voltage per Diode at IF = 2.0 A
Maximum Reverse Current at Reverse Voltage
Maximum Reverse Current at Reverse Voltage Ta = 100 °C
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
D3S
B10
D3S
B20
D3S
B40
D3S
B60
D3S
B80
UNIT
VRM 100 200 400 600 800 V
IF(AV) 4.0 A
IFSM 120 A
VF 1.05 V
IR 10 μA
IR(H) 100 μA
TJ
- 40 to + 150
°C
TSTG
- 40 to + 150
°C
Page 1 of 2
Rev. 02 : March 25, 2005

D3SB60
www.eicsemi.com
TH97/2478
TH09/2479
RATING AND CHARACTERISTIC CURVES ( D3SB10 - D3SB80 )
IATF 0113686
SGS TH07/1033
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
5.0
4.0
3.0
2.0
1.0
0
0 25 50 75 100 125 150 175
CASE TEMPERATURE, ( °C)
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
150
120
90
60
30
0
12
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
100
10
1.0
0.1
0.01
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, VOLTS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
10
TJ = 100 °C
1.0
0.1 TJ = 25 °C
0.01
0
20 40 60 80 100 120 140
PERCENT OF RATED
REVERSE VOLTAGE, (%)
Page 2 of 2
Rev. 02 : March 25, 2005


Features www.eicsemi.com TH97/2478 TH09/2479 I ATF 0113686 SGS TH07/1033 D3SB10 - D3S B80 SILICON BRIDGE RECTIFIERS PRV : 1 00 - 800 Volts Io : 4.0 Amperes FEATURE S : * High current capability * High su rge current capability * High reliabili ty * Low reverse current * Low forward voltage drop * Ideal for printed circui t board * Very good heat dissipation * Pb / RoHS Free MECHANICAL DATA : * Case : Reliable low cost construction utili zing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Termina ls : Plated lead solderable per MIL-STD -202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mou nting position : Any * Weight : 4.28 gr ams RBV4 0.150 (3.8) C3 0.996 (25.3 ) 0.134 (3.4) 0.189 (4.8) 0.972 (24.7 ) 0.173 (4.4) 0.383(9.7) 0.367(9.3) 0 .709 (18) 0.669 (17) 0.134(3.4) 0.122(3 .1) 0.603(15.3) 0.579(14.7) +~ ~ 0.0 75 (1.9) 0.060 (1.5) 0.130(3.7) 0.146( 3.3) 0.303 (7.7) 0.287 (7.3) 0.043 (1 .1) 0.035 (0.9) 0.032 (0.8) 0.043 (1.1) 0.114 (2.9) 0.098 (2.5.
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