N-Channel Enhancement Mode Power MOSFET
Description
The FNK01N30T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of other applications.
General Features
● VDSS =100V,ID =300A RDS(ON) < 3.3mΩ @ VGS=10V （Typ：2.7mΩ）
● Good stability and uniformity with high EAS ● High density cell d...
