FNK6A-1
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK6A-1 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
● VDS = 19V,ID =6A RDS(ON) <23mΩ @ VGS=2.5V RDS...