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FNK10N03 Dataheets PDF



Part Number FNK10N03
Manufacturers FNK
Logo FNK
Description N-Channel Power MOSFET
Datasheet FNK10N03 DatasheetFNK10N03 Datasheet (PDF)

FNK10N03 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK10N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =40V,ID =100A RDS(ON) <4.0mΩ @ VGS=10V RDS(ON) <5.1mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipati.

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FNK10N03 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK10N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =40V,ID =100A RDS(ON) <4.0mΩ @ VGS=10V RDS(ON) <5.1mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Load switching ● Hard switched and high frequency circuits ● Uninterruptible power supply Schematic diagram Marking and pin assignment Top View DFN5X6 Bottom View PIN1 Package Marking and Ordering Information Device Marking Device Device Package FNK10N03 FNK10N03 DFN5*6 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-S.


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