Document
FNK10N03
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK10N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =40V,ID =100A RDS(ON) <4.0mΩ @ VGS=10V RDS(ON) <5.1mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Application
● Load switching ● Hard switched and high frequency circuits ● Uninterruptible power supply
Schematic diagram
Marking and pin assignment
Top View
DFN5X6 Bottom View
PIN1
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK10N03
FNK10N03
DFN5*6
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-S.