FNK10N01-A

FNK10N01-A FNK N-Channel Enhancement Mode Power MOSFET Description The FNK10N01-A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =25V,ID =150A RDS(ON) <2.05 mΩ @ VGS=10V RDS(ON) <3.05m Ω @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Marking and pin assignment Schematic diagram Top View DFN5X6 Bottom View Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply PIN1 Package Marking and Ordering Information Device Marking FNK10N01-A Device FNK10N01-A Device Package DFN5X6-8L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) D...