Document
FNK P-Channel Enhancement Mode Power MOSFET
Description
The FNK10P18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested.
General Features
● VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V
(Typ:85mΩ)
● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density cell design for ultra low On-Resistance
Application
● Power management in notebook computer ● Portable equipment and battery powered systems
FNK10P18K
Schematic diagram TO-252 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK10P18K
FNK10P18K
TO-252
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain.