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FNK10P18K Dataheets PDF



Part Number FNK10P18K
Manufacturers FNK
Logo FNK
Description P-Channel Power MOSFET
Datasheet FNK10P18K DatasheetFNK10P18K Datasheet (PDF)

FNK P-Channel Enhancement Mode Power MOSFET Description The FNK10P18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features ● VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ) ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density cell design for ultra low On-Resistance Application ● Power management in noteb.

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FNK P-Channel Enhancement Mode Power MOSFET Description The FNK10P18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features ● VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ) ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density cell design for ultra low On-Resistance Application ● Power management in notebook computer ● Portable equipment and battery powered systems FNK10P18K Schematic diagram TO-252 top view Package Marking and Ordering Information Device Marking Device Device Package FNK10P18K FNK10P18K TO-252 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain.


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