FNK06N07E
N-Channel Trench Power MOSFET
General Description
The FNK06N07E is N-channel MOS Field Effect Transistor des...
FNK06N07E
N-Channel Trench Power MOSFET
General Description
The FNK06N07E is N-channel MOS Field Effect
Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.
Top View
Features
● VDS=65V; ID=88A@ VGS=10V;
RDS(ON)<7.45mΩ @ VGS=10V ● Special Designed for E-Bike Controller Application
● Ultra Low On-Resistance ● High UIS and UIS 100% Test
Top View
DFN5X6 Bottom View
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK06N07E
FNK06N07E
DFN5*6
Reel Size -
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V)
VGS Gate-Source Voltage (VDS=0V)
ID (DC)
Drain Current (DC) at Tc=25℃
ID (DC) IDM (pluse)
Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1)
dv/dt
Peak Diode Recovery Voltage
PD Maximum Power Dissipation(Tc=25℃)
Derat...
