FNK08NS04E

FNK N-Channel Enhancement Mode Power MOSFET Description The FNK08NS04E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. FNK08NS04E General Features ● VDS =85V,ID =120A RDS(ON) <5.7mΩ @ VGS=10V (Typ:4.5mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Special designed for convertors and power controls ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Automotive applications ● Hard switched and high frequency circuits ● Uninterruptible power supply Schematic diagram Top View 18 27 36 45 Top View DFN5X6 Bottom View PIN1 Package Marking and Ordering Information Device Marking Device Device Package FNK08NS04E FNK08NS04E DFN5*6-8L Reel Size - Tape width - Ab...