FNK03N03

FNK03N03 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK03N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =100A RDS(ON) <3.2mΩ @ VGS=10V (Typ:2.5mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Schematic diagram Marking and pin assignment Top View Bottom View DFN5X6 Package Marking and Ordering Information Device Marking Device Device Package FNK03N03 FNK03N03 DFN5x6 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Sour...