N-Channel Power MOSFET
FNK N-Channel Enhancement Mode Power MOSFET
Description
TheFNK12N12 uses advanced trench technology and design to provid...
Description
FNK N-Channel Enhancement Mode Power MOSFET
Description
TheFNK12N12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
FNK12N12
General Features
● VDS =120V,ID =120A RDS(ON) < 7.2mΩ @ VGS=10V
(Typ:5.8mΩ)
Schematic diagram
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
To-220 Top View
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK12N12
FNK12N12
TO-220
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS...
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